Sensitivity of porous silicon-ferromagnetic metal composites to molecular hydrogen adsorption |
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| Authors: | I. M. Antropov G. B. Demidovich S. N. Kozlov |
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| Affiliation: | 1. Department of Physics, Moscow State University, Moscow, 119992, Russia
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| Abstract: | The effect of molecular hydrogen adsorption on the current-voltage characteristics of structures based on porous silicon (por-Si) nanocomposites with nickel (por-Si-Ni) and cobalt (por-Si-Co) has been studied. The samples exhibit significant sensitivity to molecular hydrogen adsorption at a temperature of about 150°C. A model is proposed that explains the observed phenomena. |
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