| 电离辐射对Si_3N_4/SiO_2/Si中SiO_2禁带的影响 |
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| 引用本文： | 刘昶时. 电离辐射对Si_3N_4/SiO_2/Si中SiO_2禁带的影响[J]. 固体电子学研究与进展, 2009, 29(1) |
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| 作者姓名： | 刘昶时 |
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| 作者单位： | 嘉兴学院机电学院物理教学部,浙江,嘉兴,314001 |
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| 摘 要： | 根据X光激发电子能谱(XPS)中元素各个态的位置与价带顶、导带底的位置关系,提出了对一个已有唯像模型的修正,由这个修正模型能够利用XPS数据考察异质结的禁带在经历某些过程后是否有变化。将这个方法应用于经历60Co辐照的Si3N4/SiO2/Si,结果表明:从SiO2到Si存在SiO2禁带的弯曲,而辐照将SiO2禁带变薄;同时,SiO2禁带的变化明显依赖于辐照条件。就实验现象的机制进行了探讨。
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| 关 键 词： | 能带弯曲 禁带 X光激发电子能谱 二氧化硅 辐照 |
Offset of Band Gap of SiO_2 in Si_3N_4/SiO_2/Si Induced by ~(60)Co |
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| LIU Changshi. Offset of Band Gap of SiO_2 in Si_3N_4/SiO_2/Si Induced by ~(60)Co[J]. Research & Progress of Solid State Electronics, 2009, 29(1) |
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| Authors: | LIU Changshi |
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| Affiliation: | Physics Division;Department of Mechanical and Electrical Engineering;Jiaxing College;Jiaxing;Zhejiang;314001;CHN |
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| Abstract: | In order to determine whether there is any shift of band gap induced by 60Co radiation,using X-ray photoelectron spectroscopy (XPS) data one method for effectively locating such offset is suggested. The XPS data of SiO2 interface at Si3N4/SiO2/Si before and after radiation are analyzed by means of this way. The results show that there is band bending at interface of SiO2/Si,meanwhile the energy gap of SiO2 after radiation was narrower than that before radiation. The change of energy band gap in SiO2 was str... |
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| Keywords: | band bending energy gap XPS SiO2 radiation |
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