Linewidth of InP-based 1.55 /spl mu/m VCSELs with buried tunnel junction |
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| Authors: | Shau R. Halbritter H. Riemenschneider F. Ortsiefer M. Rosskopf J. Bohm G. Maute M. Meissner P. Amann M.-C. |
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| Affiliation: | Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany; |
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| Abstract: | ![]()
Spectral linewidth measurements of 1.55 /spl mu/m InGaAlAs/InP vertical-cavity surface-emitting lasers (VCSELs) employing a buried tunnel junction are reported. A narrow linewidth around 28 MHz was obtained at a power level of 0.5 mW using the self-heterodyne method, and an estimation for the linewidth enhancement factor is given. |
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