| 毫米波二倍频器的研究与设计 |
| |
| 引用本文： | 张倩,孙玲玲,文进才.毫米波二倍频器的研究与设计[J].杭州电子科技大学学报,2013(6):17-20. |
| |
| 作者姓名： | 张倩 孙玲玲 文进才 |
| |
| 作者单位： | 杭州电子科技大学射频电路与系统教育部重点实验室,浙江杭州310018 |
| |
| 基金项目： | 基金项目：国家重点基础研究发展计划资助项目（2010CB327403） |
| |
| 摘 要： | 利用砷化镓场效应管器件的非线性特性设计了一个单端毫米波段二倍频器，输入频率为27次谐波抑制大于25 dB。芯片总面积（含pad）为1．068 mm ＆#215;0．495 mm。
|
| 关 键 词： | 砷化镓场效应管 毫米波 二倍频器 |
Research and Design of the Millimeter-wave Frequency Multiplier |
| |
| ZHANG Qian,SUN Ling-ling,WEN Jin-cai.Research and Design of the Millimeter-wave Frequency Multiplier[J].Journal of Hangzhou Dianzi University,2013(6):17-20. |
| |
| Authors: | ZHANG Qian SUN Ling-ling WEN Jin-cai |
| |
| Affiliation: | (Key Lab. of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou Zhejiang 310018, China) |
| |
| Abstract: | A single-ended millimeter-wave frequency doubler imposing on the nonlinear characteristic of GaAs field effect transistor is presented .Its input frequency is 27 33 GHz, and output frequency is 54 66 GHz. The frequency doubler is included a nonlinear device , matching circuit , and a biasing circuit . For a fundamental input power of 5 dBm, this frequency doubler demonstrates an output power between 2.3 and 0 dBm, the fundamental rejection is beyond 15 dB and the third harmonic frequency rejection is over 25 dB. The total size of this compact chip is 1.068 mm ＆#215;0.495 mm. |
| |
| Keywords: | GalnumArsenide field effect transistor millimeter-wave frequency doubler |
| 本文献已被 维普 等数据库收录！ |
