Electroluminescence spectroscopy for reliability investigations of 1.55 μm bulk semiconductor optical amplifier

This paper demonstrates the complementary relation between functional parameters and electroluminescence spectroscopy for reliability investigations of 1550 nm Semiconductor Optical Amplifiers of 700 μm length active region. Ageing tests have been set to 270 mA-100 °C-1500 h and realized on two different wafers showing more impact on wafer 1 than on wafer 2. Our investigations are particularly focused on interpretation of electroluminescence spectra, from reference and aged SOAs of wafer 1, leading to an improvement of degradation mechanisms understanding. The shift rate to lower energies of the recombination energy peak at 1550 nm, as reported by electroluminescence spectra between reference and aged SOAs in relation with the decrease of optical power measured at 200 mA for the degraded SOA and completed by I(V) characterizations, suggest occurrence of non radiative deep centers near the buried ridge structure in relation with the cleaning process uniformity of interfaces before epitaxial overgrowth. These defects mainly trap majority injected carriers instead of minority carriers reducing the luminescence in the active zone. By monitoring the most sensitive failure indicator (pseudo-threshold current), lifetime distributions are also calculated to determine failure rate, between 150 and 200 FITs over 15 years for operating conditions (25 °C-200 mA) using experimental degradation laws and statistic computations, demonstrating the overall robustness of this technology.