High-gain pseudomorphic InGaAs base ballistic hot-electron device |
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| Authors: | Seo K Heiblum M Knoedler CM Oh JE Pamulapati J Bhattacharya P |
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| Affiliation: | IBM Thomas J. Watson Res. Center, Yorktown Heights, NY; |
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| Abstract: | A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In 0.12Ga0.88As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Γ-L valley separation in the strained In0.12Ga0.88As was estimated to be about 380 meV |
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