Ion beam milling-induced damage in AlGaAs/GaAs/AlGaAs single quantum well |
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| Authors: | Swaminathan V. Przybylek G.J. Guth G. Asom M.T. |
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| Affiliation: | AT&T Bell Labs., Solid State Technol. Center, Breinigsville, PA, USA; |
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| Abstract: | Ion beam milling-induced damage in a 500 AA AlGaAs/40 AA GaAs/500 AA AlGaAs single quantum well structure was investigated using low temperature cathodoluminescence spectroscopy. The ion beam energy (500-1500 eV) dependence of luminescence intensity indicated that minimum damage is introduced at a beam energy of 500 eV. Most (80-85%) of the original luminescence intensity was recovered on annealing at 400 degrees C for 5 min.<> |
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