| 双槽电化学腐蚀法制备多孔硅的研究 |
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| 引用本文： | 张萍,娄利飞,柴常春,杨银堂.双槽电化学腐蚀法制备多孔硅的研究[J].压电与声光,2007,29(6):740-742. |
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| 作者姓名： | 张萍 娄利飞 柴常春 杨银堂 |
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| 作者单位： | 西安电子科技大学,微电子所,宽禁带半导体材料与器件教育部重点实验室,陕西,西安,710071 |
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| 摘 要： | 论述了多孔硅的特点和制备方法,简单介绍双槽电化学腐蚀法的特点,并采用双槽电化学腐蚀法成功制备了多孔硅。多孔硅的扫描电镜(SEM)照片表明,孔径尺寸小,均匀性好,腐蚀结构规则。实验结果表明,衬底导电类型影响着多孔硅的制备条件。
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| 关 键 词： | 牺牲层 多孔硅 双槽电化学腐蚀法 |
| 文章编号： | 1004-2474（2007）06-0740-03 |
| 收稿时间： | 2006-08-14 |
| 修稿时间： | 2006年8月14日 |
Study on Preparing Porous Silicon by Double-cell Electrochemistry Etching |
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| ZHANG Ping,LOU Li-fei,CHAI Chang-chun,YANG Yin-tang.Study on Preparing Porous Silicon by Double-cell Electrochemistry Etching[J].Piezoelectrics & Acoustooptics,2007,29(6):740-742. |
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| Authors: | ZHANG Ping LOU Li-fei CHAI Chang-chun YANG Yin-tang |
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| Abstract: | The characteristic and preparing of porous silicon were discussed.The porous silicon was successfully prepared by double-cell electrochemical etching.The SEM photos of porous silicon prepared by double-cell electrochemical etching were observed.The results show that the porous silicon obtained by this method has the smaller hole diameter,good uniformity,ordered etching structure.The type of substrate affect the condition of the porous silicon preparation. |
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| Keywords: | sacrifice porous silicon double-cell electrochemical etching |
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