Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films |
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| Authors: | Kazimierz Paprocki Kazimierz Fabisiak Robert Bogdanowicz Łukasz Gołuński Elżbieta Staryga Mirosław Szybowicz Magdalena Kowalska Agnieszka Banaszak-Piechowska |
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| Affiliation: | 1.Institute of Physics,Kazimierz Wielki University,Bydgoszcz,Poland;2.Faculty of Electronics, Telecommunications and Informatics,Gdansk University of Technology,Gdansk,Poland;3.Faculty of Technical Physics,Poznan University of Technology,Poznan,Poland;4.Faculty of Chemical Technology and Engineering,University of Technology and Life Sciences,Bydgoszcz,Poland;5.Institute of Physics,Technical University of ?ód?,Lodz,Poland |
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| Abstract: | The undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical properties of synthesized diamond layer were characterized by dc-conductivity method and charge deep level transient spectroscopy. The B-doped diamond layers show higher sp2/sp3 ratios in comparison with that of undoped layers what can have an essential influence on the localized density of states associated with shallow hydrogen acceptor states what is reflected in the values of activation energies which reached the values of 38 meV for B-doped and 55 meV for undoped diamond layers, respectively. The existence of deep level traps, as, for example, associated with B-related acceptors, was not observed. |
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