| SiGe/SiHBT发射结的寄生势垒及其对器件室温和低温特性的影响 |
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| 引用本文： | 徐晨,沈光地,陈建新,邹德恕,李建军,罗辑,魏欢,周静,董欣.SiGe/SiHBT发射结的寄生势垒及其对器件室温和低温特性的影响[J].半导体学报,2000,21(12):1208-1213. |
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| 作者姓名： | 徐晨 沈光地 陈建新 邹德恕 李建军 罗辑 魏欢 周静 董欣 |
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| 作者单位： | 北京工业大学电子工程系, |
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| 基金项目： | 国家高技术研究发展计划(863计划);863-307-105-4(06; |
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| 摘 要： | 研究了SiGe/Si HBT基区B杂质的偏析和外扩散对器件的影响.发现用MBE生长的Si Ge基区中,在材料生长时 B杂质的上述行为会严重破坏器件的室温电流增益并改变器件的低温性能.采用数值计算分析了B杂质的上述行为与在发射结产生的寄生势垒的关系,解释了器件温度特性的实验结果.并根据计算模拟和实验,讨论了SiGe隔离层的作用和优化的厚度
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| 关 键 词： | SiGeHBT 寄生势垒 杂质偏析 低温 |
| 文章编号： | 0253-4177(2000)12-1208-06 |
| 修稿时间： | 1999年12月20日 |
Parasitic Barrier in Emitter-Base Junction and Its Effects on Performance of SiGe/Si HBT at Both Room Temperature and Low Temperature |
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| XU Chen,SHEN Guang-di,CHEN Jian-xin,ZOU De shu,LI Jian jun,LUO Ji,WEI Huan,ZHOU Jing and DONG Xin.Parasitic Barrier in Emitter-Base Junction and Its Effects on Performance of SiGe/Si HBT at Both Room Temperature and Low Temperature[J].Chinese Journal of Semiconductors,2000,21(12):1208-1213. |
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| Authors: | XU Chen SHEN Guang-di CHEN Jian-xin ZOU De shu LI Jian jun LUO Ji WEI Huan ZHOU Jing and DONG Xin |
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| Abstract: | The effects of segregation and out-difusion of base B dopant on the characteris tics of SiGe/Si HBT were investigated experimentally. It was found that the B se gregation occurred during epitaxially grown SiGe base by MBE may drastically deg rade the current gain of the SiGe/Si HBT at room temperature and change its low temperature behavior. Simulation was carried out to evaluate the electron parasi tic barrier formed in EB junction and to analyze the experiment results. Based o n these, the function of SiGe spacer is discussed and its optimized thickness is obtained. |
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| Keywords: | SiGe HBT parasitic barrier segregation of dopant low temperature |
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