| 倒装芯片互连凸点电迁移的研究进展 |
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| 引用本文： | 吴丰顺,张金松,吴懿平,王磊. 倒装芯片互连凸点电迁移的研究进展[J]. 半导体技术, 2004, 29(6): 10-15 |
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| 作者姓名： | 吴丰顺 张金松 吴懿平 王磊 |
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| 作者单位： | 华中科技大学塑性成形模拟及模具技术国家实验室,湖北,武汉,430074;华中科技大学微系统研究中心,湖北,武汉,430074;华中科技大学塑性成形模拟及模具技术国家实验室,湖北,武汉,430074 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 电子产品向便携化、小型化、高性能方向发展,促使集成电路的集成度不断提高,体积不断缩小,采用倒装芯片互连的凸点直径和间距进一步减小和凸点中电流密度的进一步提高,由此出现电迁移失效引起的可靠性问题.本文回顾了倒装芯片互连凸点电迁移失效的研究进展,论述了电流聚集和焊料合金成分对凸点电迁移失效的影响,指出了倒装芯片互连凸点电迁移研究亟待解决的问题.
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| 关 键 词： | 倒装芯片 互连 凸点 电迁移 |
| 文章编号： | 1003-353(2004)06-0010-06 |
The progress of electromigration in bump interconnect |
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| WU Feng-shun, ZHANG Jin-song,WU Yi-ping,,WANG Lei. The progress of electromigration in bump interconnect[J]. Semiconductor Technology, 2004, 29(6): 10-15 |
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| Authors: | WU Feng-shun ZHANG Jin-song WU Yi-ping WANG Lei |
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| Affiliation: | WU Feng-shun1,2 ZHANG Jin-song1,WU Yi-ping1,2,WANG Lei1 |
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| Abstract: | With the advance of electronic-products to portability, minimization and highperformance, the integrated density of chip is raising continually and the volume of chip is loweringcontinually. The interconnect reliability caused by electromigration in chip is becoming a key issue.In this paper, the study of electromigration on Sn/Pb alloy and Pb-free alloy solder bumps werereviewed. The effects of current crowding and alloy composition on electromigration were discussed,and then, the imminent challenges on electromigration were pointed out. |
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| Keywords: | flip chip interconnect bump electromigration |
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