| CHARACTERIZATION OF Si_(1-x-y)Ge_xC_y FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPITAXY |
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| 作者姓名： | X.Q. Liu Y.Y. Wang W.J. Cheng J. Zhang S.Y. Ma |
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| 作者单位： | X.Q. Liu Y.Y. Wang，W.J. Cheng，J. Zhang and S.Y. Ma Department of Physics，Lanzhou University，Lanzhou 730000，China Department of physics，Northwest Normal University，Lanzhou 730030，China |
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| 基金项目： | The authors would like to thank Dr. X. W. Zhang for performing the ion implantation experiments. This work was supported by the National Natural Science Foundation of China (Grant No. 69876017). |
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| 摘 要： | Si1-x-yGexCy ternary alloy films were grown on monocrystalline silicon substrates by C ion implantation and subsequent solid phase epitaxy (SPE). Two-step anneal-ing technique was employed in the SPE. The structure and electrical properties of the alloy films were determined using Fourier transform infrared spectroscopy and van der Pauw Hall measurements, respectively. With the optimization of two-step anneal-ing technique for the implanted Si1-x-yGexCy layers, a certain amount of C atoms occupied substitutional sites and no SiC was formed.
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CHARACTERIZATION OF Si_(1-x-y)Ge_x FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPITAXY |
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| X.Q. Liu
, Y.Y. Wang
, W.J. Cheng
, J. Zhang
, S.Y. Ma.CHARACTERIZATION OF Si_(1-x-y)Ge_xC_y FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPITAXY[J].Acta Metallurgica Sinica(English Letters),2002(1). |
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| Authors: | XQ Liu YY Wang WJ Cheng J Zhang and SY Ma |
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| Affiliation: | X.Q. Liu Y.Y. Wang,W.J. Cheng,J. Zhang and S.Y. Ma Department of Physics,Lanzhou University,Lanzhou 730000,China Department of physics,Northwest Normal University,Lanzhou 730030,China |
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| Abstract: | Si1-x-yGexCy ternary alloy films were grown on monocrystalline silicon substrates by C ion implantation and subsequent solid phase epitaxy (SPE). Two-step annealing technique was employed in the SPE. The structure and electrical properties of the alloy films were determined using Fourier transform infrared spectroscopy and van der Pauw Hall measurements, respectively. With the optimization of two-step annealing technique for the implanted Si1-x-yGexCy layers, a certain amount of C atoms occupied substitutional sites and no SiC was formed. |
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| Keywords: | Si1-x-yGexCu film ion implantation SPE |
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