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Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride |
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| Authors: | Bobrovnikova I. A. Ivonin I. V. Novikov V. A. Preobrazhenskii V. V. |
| Affiliation: | (1) Tomsk State University, Tomsk, 634050, Russia;(2) Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia |
| Abstract: | Semiconductors - The method of atomic-force microscopy has been used to experimentally study the effect of growth conditions on the structure of the surface of epitaxial GaN layers grown by... |
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