掺Si对AlGaInP/GaInP多量子阱发光性能的影响

研究了Si掺杂对MOCVD生长的（Al0.3Ga0.7）In0.5P/Ga0.5In0.5P多量子阱发光性能的影响．样品分为两类：一类只生长了（Al0.3Ga0.7）In0.5P/Ga0.5In0.5P多量子阱结构；另一类为完整的多量子阱LED结构．对于只生长了（Al0.3Ga0.7）In0.5P/Ga0.5In0.5P多量子阱结构的样品，掺Si没有改变量子阱发光波长，但使得量子阱发光强度略有下降，发光峰半高宽明显增大．这应是掺Si使量子阱界面质量变差导致的．而在完整LED结构的情况下，掺Si却大大提高了量子阱的发光强度．相对于未掺杂多量子阱LED结构，垒层掺Si使多量子阱的发光强度提高了13倍，阱层和垒层均掺Si使多量子阱的发光强度提高了28倍，并对这一现象进行了讨论．

Influence of Si-Doping on Luminescence Properties of AlGaInP/GaInP Multiple Quantum Wells

Al 0.3Ga 0.7)In 0.5P/Ga 0.5In 0.5P multiple quantum wells (MQWs) are grown by LP-MOCVD.The influence of Si-doping on the luminescence properties of (Al 0.3Ga 0.7)In 0.5P/Ga 0.5In 0.5P MQWs is studied.For the samples without p-type layers above it,the PL peak wavelength from the MQWs does not vary when Si is doped in MQWs,but the peak intensity slightly decreases and the FWHM is obviously broadened.These phenomena indicate that Si-doping results in worse interface quality of MQWs.However,for the full LED structure samples,the PL intensity of MQWs obviously increases when Si is doped in MQWs.The PL intensity from MQWs with Si-doped barriers is about 13 times stronger than that of undoped MQWs.The PL intensity from MQWs with Si-doped barriers and wells is 28 times as strong as that of undoped MQWs.The reasons are discussed.