| 金属镍诱导p型多晶硅薄膜的光电性能研究 |
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| 引用本文： | 黄园媛,石培培,牛巧利,章勇.金属镍诱导p型多晶硅薄膜的光电性能研究[J].功能材料与器件学报,2011,17(4):350-354. |
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| 作者姓名： | 黄园媛 石培培 牛巧利 章勇 |
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| 作者单位： | 光电子材料与技术研究所,华南师范大学,广州510631 |
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| 基金项目： | 国家自然科学基金项目(No.10904042); 教育部留学回国人员科研启动基金项目; 广东省自然科学基金项目(No.8521063101000007) |
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| 摘 要： | 利用电子束蒸镀方法及重掺杂p型硅为蒸发源在K8玻璃衬底上沉积非晶硅薄膜,采用镍诱导晶化法在氮气氛围下进行退火处理制备出p型多晶硅薄膜.研究了不同温度热处理条件对p型多晶硅薄膜的光电性能的影响,通过霍尔测量、拉曼光谱、原子力显微镜、紫外-可见光吸收光谱等测试手段对薄膜进行分析.结果表明,随着晶化温度的提高晶化程度先增强后...
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| 关 键 词： | 金属诱导晶化 p型多晶硅薄膜 非晶硅薄膜 |
Study of Photoelectric Properties of p-type Polycrystalline Silicon Thin Films by Nickel Induced Crystallization |
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| HUANG Yuan-yuan,SHI Pei-pei,NIU Qiao-li,ZHANG Yong.Study of Photoelectric Properties of p-type Polycrystalline Silicon Thin Films by Nickel Induced Crystallization[J].Journal of Functional Materials and Devices,2011,17(4):350-354. |
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| Authors: | HUANG Yuan-yuan SHI Pei-pei NIU Qiao-li ZHANG Yong |
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| Affiliation: | HUANG Yuan-yuan,SHI Pei-pei,NIU Qiao-li,ZHANG Yong(Institute of Optoelectronic Materials and Technology,South China Normal University,Guangzhou 510631,China) |
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| Abstract: | The amorphous silicon thin films have been deposited on K8 glass substrates by electron beam vapor deposition and high doping p-type silicon as an evaporating source.The p-type polycrystalline silicon(poly-Si) thin films have been fabricated by nickel-induced crystallization in nitrogen atmosphere.The effects of different annealing temperatures on photoelectric properties of p-type poly-Si thin films were investigated.The p-type poly-Si thin films were characterized by Hall,Raman,AFM and ultraviolet-visible... |
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| Keywords: | metal induced crystallization p-type polycrystalline silicon thin films amorphous silicon thin film |
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