射频磁控反应溅射制备ZnO/AlN双层膜的结构和性能

采用射频磁控反应溅射在Si（100）衬底上制备了ZnO/AlN双层膜。使用X射线衍射仪、原子力显微镜（AFM）、LCR测试仪及荧光分光光度计等仪器对样品进行了结构、表面形貌、导电性及荧光光谱的测试,并与相同工艺下制备的ZnO单层薄膜进行了对比研究。结果表明,ZnO/AlN双层膜的c轴择优取向性优于单层ZnO薄膜,薄膜应力更小,且为压应力,晶粒尺寸大于单层膜,表面粗糙度较小,并且其电阻率更低。荧光光谱显示,ZnO/AlN双层膜的结晶质量更好。

STRUCTURE AND PROPERTIES OF ZnO/AlN BILAYERS PREPARED BY RF MAGNETRON REACTIVE SPUTTERING

ZnO/AlN bilayers were deposited on Si（100） subtrate by RF magnetron reactive sputtering. The structure, surface morphology, electrical resistivities and fluorescence spectrum of the ZnO/AlN bilayers were determined by using XRD, AFM, LCR HITESTER and fluoescence spectromter. Compared with ZnO/Si films prepared by using the same processing parameter, the ZnO/AlN bilayers, with a preferred orientation in c-axis, have a litter membrance stress and root-mean-square roughness, and a lower electrical resistivity. The fluorescence spectrum shows that the crystalline quality of ZnO/AlN bilayers is better than that of ZnO/Si films.