百瓦级多芯片半导体激光器稳态热分析 |
| |
引用本文: | 王文,高欣,周泽鹏,许留洋,周路,薄报学.百瓦级多芯片半导体激光器稳态热分析[J].红外与激光工程,2014,43(5):1438-1443. |
| |
作者姓名: | 王文 高欣 周泽鹏 许留洋 周路 薄报学 |
| |
作者单位: | 1.长春理工大学高功率半导体激光国家重点实验室,吉林 长春 130022 |
| |
基金项目: | 国家自然科学基金(61177019,61176048);吉林省科技发展计划(20120361) |
| |
摘 要: | 半导体激光器在各领域的广泛应用要求其输出功率不断提高,使得多芯片集成封装大功率半导体激光器的发展成为主流之一。针对典型的12 只芯片以阶梯形式封装的百瓦级激光器,利用ANSYS 软件进行了稳态热分析,模拟得出芯片有源区温度及其热耦合温升与热沉结构尺寸变化的关系曲线,分析了该激光器热特性,进而提出一种使芯片散热较好的热沉结构。
|
关 键 词: | 百瓦级半导体激光器 ANSYS 有源区 热耦合 热沉 |
收稿时间: | 2013-09-20 |
Steady-state thermal analysis of hundred-watt semiconductor laser with multichip-packaging |
| |
Affiliation: | 1.National Key Lab on High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China |
| |
Abstract: | The semiconductor lasers are widely used in various fields, this requires that their output power is increasingly improved, so the development of high power semiconductor laser with multichip-packaging is one of mainstream. A typical hundred-watt semiconductor laser packaged with 12 chips in ladder form was analyzed in thermal steady-state, obtaining the rule curves of the temperature of active region of chip and temperature rise by thermal coupling in different parameters of heat sink, and a heat sink structure with better heat dissipation was put forward. |
| |
Keywords: | |
本文献已被 CNKI 等数据库收录! |
| 点击此处可从《红外与激光工程》浏览原始摘要信息 |
|
点击此处可从《红外与激光工程》下载全文 |
|