MBE外延InSb基CdTe工艺研究

成功制备了CdTe/InSb复合衬底，为长波HgCdTe外延提供了可能。通过工艺研究解决了InSb氧化层去除及In元素扩散控制两个难点问题，使用As钝化法可以解决双腔衬底转移的问题，在常用的退火工艺下，通过厚度的调整可以阻挡In元素的扩散。

Process research of CdTe growth on InSb substrate by molecular beam epitaxy

For fabricating long wavelength HgCdTe material,CdTe/InSb composite substrate was grown by molecular beam epitaxy(MBE). Two difficult problems of InSb oxide layer removal and In material diffusion control was solved through experimental research and technical analysis. Secondary oxidation of InSb substrate can be prevented by growing As passivation layer on InSb substrate before InSb substrate transfers from III-V cavity to II-VI cavity. In material diffusion can be prevented by adjusting the thickness of As passivation layer under common annealing process.