The effect of annealing on the physical properties of thermally evaporated CuIn2n+1S3n+2 thin films (n=0, 1, 2 and 3) |
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Authors: | D. Abdelkader N. Khemiri M. Kanzari |
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Affiliation: | Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, Université Tunis ElManar, BP 37, Le belvédère, 1002 Tunis, Tunisia |
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Abstract: | In this study, the annealing effect on structural, electrical and optical properties of CuIn2n+1S3n+2 thin films (n=0, 1, 2 and 3) are investigated. CuIn2n+1S3n+2 films were elaborated by vacuum thermal evaporation and annealed at 150 and 250 °C during 2 h in air atmosphere. XRD data analysis shows that CuInS2 and CuIn3S5 (n=0 and 1) crystallize in the chalcopyrite structure according to a preferential direction (112), CuIn5S8 and CuIn7S11 (n=2 and 3) crystallize in the cubic spinel structure with a preferential direction (311). The optical characterization allowed us to determine the optical constants (refractive indexes 2.2–3.1, optical thicknesses 250–500 nm, coefficients of absorption 105 cm?1, coefficients of extinction <1, and the values of the optical transitions 1.80–2.22 eV) of the samples of all materials. We exploited the models of Cauchy, Wemple–DiDomenico and Spitzer–Fan for the analysis of the dispersion of the refractive index and the determination of the optical and dielectric constants. |
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Keywords: | Thin films Vapor deposition Electrical properties Optical properties |
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