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Antireflection coating on InP for semiconductor detectors |
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| Affiliation: | 1. Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, PR China;2. College of Physical Science and Technology, Sichuan University, Chengdu 610065, China;3. Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China;1. Fraunhofer USA Inc., Center for Coatings and Laser Applications, East Lansing, MI, USA;2. Michigan State University, Department of Electrical and Computer Engineering, East Lansing, MI, USA |
| Abstract: | Aluminum nitride thin film by RF magnetron sputtering is used to produce antireflection coating on InP. The index of refection variation of aluminum nitride for different thickness at different wavelength in the range of 400 to 1500 nm is investigated using reflection spectroscopy. Subsequent Ar+ ion implantation at 30 keV with different doses on these coated layers has been performed. The morphology of aluminum nitride after ion implantation is characterized using atomic force microscopy AFM. |
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