基于电子散斑干涉技术的IC芯片加速寿命预测研究

提出了基于电子散斑干涉技术(ESPI)可预估局部温度最高区域的加速寿命预测方法.实验通过对芯片样品进行了动态工作模式下的功耗评估,预估了芯片局部温度最高的热源区域,尔后对此区域进行去封装处理;在芯片去封装区域,分别测出常温和高温环境下芯片动态上作模式的裸片表面温度,以此数据作为Arrhenius模型中加速因子的结温,求出加速因子;最后,根据实验得出芯片存高温环境下的寿命时间,即可推出其在正常工作条件下的寿命.结果表明,这种方法具有准确、快速和简单的特点,可广泛应用于微电子器件的正常工作寿命预测.

Research on accelerated life predicting of IC chips based on ESPI

A simple and reliable procedure is described to predict the life time integrated circuits(IC)chips with electronic speckle pattern interferometer(ESPI)techniques.The procedure is based on the principle that it is possible to predict the chips' local part with maximum temperature which is called the heat source.To locate the heat source,the specimen is first tested by evaluating power dissipation on dynamic mode.And then,the packaging materials are removed from this part.In the experiment,surface temperature...