Metalorganic InP and Inx Ga1-x,Asy P1-y,on InP epitaxy at atmospheric pressure |
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| Authors: | A Mircea R Azoulay L Dugrand R Mellet K Rao M Sacilotti |
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| Affiliation: | (1) Centre National d'Etudes des Télécommunications, Laboratoire de BAGNEUX, 196 rue de Paris, 92220 Bagneux, France;(2) Present address: Telebras CPqD, Rodovia Campinas/Mogi Mirim, Campinas, Sao Paolo, Brasil |
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| Abstract: | We present a procedure for the MOVPE of InP as simple as the one currently used for GaAs. InP and InGaAsP alloys are grown
on InP substrates using trimethy1indium (TMI), phosphine, trimethylgallium (TMG) and arsine. The choice of carrier gas is
important ; a mixture of hydrogen and nitrogen allowed us to grow uniform layers over large areas at atmospheric pressure,
without pyrolizing the phosphine or separating the input reactants. Preliminary characterization results are presented.
Most information contained in this paper was presented at the 1983 Electron Materials Conference as paper Cl. |
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| Keywords: | MOVPE epitaxy indium phosphide quaternary alloys Inx Ga1-x Asy P1-y metakirganic vapor phase epitaxy |
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