Surface passivation of multicrystalline silicon wafers by porous silicon combined with an ultrathin nanoparticles aluminum coating film

In this paper, we demonstrate that we may efficiently improve surface passivation of multi-crystalline silicon (mc-Si) while combining formation of porous silicon (PS) and deposition of ultrathin aluminum (Al) film. Aluminum Nanoparticles were deposited by thermal evaporation onto PS formed on mc-Si wafers. Optoelectronic properties of Al/PS/mc-Si and Al/mc-Si treated samples were investigated before and after annealing in the 400–700 °C temperature range. The surface passivation effectiveness was pointed out based on minority carrier lifetime and photoluminescence measurements. It was found that, at a minority carrier density Δn = 10¹⁵ cm^?3, the effective minority carrier lifetime increases from 1.5 μs (for the bare mc-Si wafer) to about 6 and 14 μs before and after thermal annealing, respectively. FTIR analyses show strong correlation between the minority carrier lifetime values and hydrogen and Al passivation. Major beneficial effect of the co-presence of Al and Al–O on the optoelectronic properties is also demonstrated. The reflectivity of Al/PS treated mc-Si decrease significantly at 500 nm as compared to untreated mc-Si (from 31 % for untreated mc-Si wafers to 8 % for Al/PS treated ones), which is due to the roughly ordered structure and to the Al nanoparticles.