Anomalous reverse short-channel effect in p+ polysilicongated P-channel MOSFET |
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| Authors: | Chun-Yen Chang Chih-Yung Lin Jih Wen Chou Hsu C.C.-H. Hong-Tsz Pan Ko J. |
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| Affiliation: | Nat. Nano Device Lab., Nat. Chiao Tung Univ., Hsinchu; |
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| Abstract: | The boron-penetration-dependent Reverse Short Channel Effect (RSCE) on the threshold voltage is observed for short channel p+ poly-gate PMOSFET's. The RSCE is found to be more significant as the boron penetration becomes more severe. The RSCE is significant in BF 2 doped poly-gated MOS devices and is alleviated in buffered poly-gated MOS devices. Fluorine enhanced boron diffusion in the gate oxide during high temperature process is believed to account for the RSCE, which is also confirmed by using a two-dimensional process simulator |
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