A model for laterally graded Cu2S/ZnxCd1-xS photovoltaic heterojunctions |
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| Authors: | W. B. Hsu L. C. Burton |
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| Affiliation: | (1) Department of Electrical Engineering, Virginia Polytechnic Institute and State University, 24061 Blacksburg, VA, USA |
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| Abstract: | A model is presented for the Cu2S/ZnxCd1-xS heterojunction that is based on the existence of a laterally graded zinc rich region just below the Cu2S-ZnCdS interface. Integrals for short circuit current density and current density versus applied voltage are presented. The
current-voltage characteristics, in particular the increase in open circuit voltage and decrease in short circuit current
density that occur with increasing zinc content, follow trends that have been seen experimentally for junctions formed by
ion-exchange.
Supported by the Solar Energy Research Institute. |
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| Keywords: | photovoltaics solar cells thin film solar cells heterojunctions graded heterojunctions |
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