大功率IGBT模块结温提取研究

为了提高大功率功率变换器的可靠性，需要对大功率绝缘栅双极型晶体管(Insulated gate bipolar transistor，IGBT)模块进行温度监测，到目前为止，该领域对高压IGBT的研究很少。本文搭建了双脉冲实验平台，对4.5 kV、1.2 kA IGBT模块开关瞬态时的热敏感电参数进行了测量，并对每个参数是否适用在线结温提取以及预期成本进行了讨论。结果表明，大多数参数除温度外还强烈依赖于负载电流和母线电压，最合适的结温提取参数是准阈值电压和开通时集电极电流变化率，它们都可以通过IGBT的寄生电感来获取。

Study on Junction Temperature Extraction of High-power IGBT Module

In order to improve the reliability of high-power power converters, the temperature monitoring of high-power insulated gate bipolar transistors (IGBT) modules is required. So far, there have been few studies on high-voltage IGBTs in this field. In this paper, a dual-pulse experimental platform is built , and the thermal-sensitive electrical parameters of the 4.5 kV and 1.2 kA IGBT modules during switching transients are measured. The online junction temperature extraction and expected cost for each parameter are discussed. The results show that most parameters are strongly dependent on the load current and bus voltage in addition to temperature. The most suitable junction temperature extraction parameters are the quasi-threshold voltage and the collector current rate of change at turn-on. They can be obtained by the parasitic inductance of the IGBT.