Temperature activated de-trapping processes in vacuum deposited sexithiophene thin films |
| |
| Affiliation: | 1. School of Materials Science and Engineering, Pusan National University, Busan 609-735, Republic of Korea;2. Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401, USA |
| |
| Abstract: | Photoluminescence (PL) emission spectra of sexithiophene (6T) thin films grown on different substrates by organic molecular beam deposition (OMBD) are studied in the range of temperature from 300 to 7 K. Besides the two vibronic progressions detectable between 300 and 50 K, related to the radiative recombination of the free exciton and to a structural defect state, a new emission is observed at temperatures lower than 40 K, whose origin is discussed in terms of exciton bound to a structural defects. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
