首页 | 本学科首页   官方微博 | 高级检索  
     


Split‐Gate Organic Field‐Effect Transistors for High‐Speed Operation
Authors:T Uemura  T Matsumoto  K Miyake  M Uno  S Ohnishi  T Kato  M Katayama  S Shinamura  M Hamada  M‐J Kang  K Takimiya  C Mitsui  T Okamoto  J Takeya
Affiliation:1. Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba, Japan;2. TOPPAN FORMS CO., LTD., Minato‐ku, Tokyo, Japan;3. Graduate School of Engineering, Osaka University, Suita, Osaka, Japan;4. Technology Research Institute of Osaka Prefecture, Izumi, Osaka, Japan;5. Research Laboratories, DENSO CORPORATION, Nisshin, Aichi, Japan;6. R&D Planning Division, Research & Development Group, Nippon Kayaku Co. Ltd., Kita‐ku, Tokyo, Japan;7. Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higashi‐Hiroshima, Hiroshima, Japan;8. RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, Japan
Abstract:
Keywords:organic field‐effect transistors  organic electronics  contact resistance
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号