Hybrid White Light Emitting Diode Based on Silicon Nanocrystals |
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| Authors: | Batu Ghosh Yoshitake Masuda Yutaka Wakayama Yasutaka Imanaka Jun‐ichi Inoue Kenjiro Hashi Kenzo Deguchi Hideto Yamada Yoshio Sakka Shinobu Ohki Tadashi Shimizu Naoto Shirahata |
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| Affiliation: | 1. International Center for Materials Nanoarchitectonics (WPI‐MANA), Tsukuba, Japan;2. National Institute of Advanced Industrial Science and Technology (AIST), Shimoshidami, Moriyama, Nagoya, Japan;3. Nano Physics Group, Tsukuba, Japan;4. Material Properties Theory Group, Namiki, Japan;5. High Field NMR Group, Tsukuba, Japan;6. Advanced Ceramics Group, Tsukuba, Japan;7. PRESTO, Japan Science and Technology Agency (JST), Saitama, Japan |
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| Abstract: | ![]()
A novel design of white light emitting diodes (WLEDs) emerges to meet the growing global demand for resource sustainability while preserving health and environment. To achieve this goal, a facile method is developed for the chemical synthesis of a luminescent silicon nanocrystal (ncSi) with a large Stokes shift between absorption and emission. The WLED is prepared by a simple spin‐coating method, and contains a hybrid‐bilayer of the ncSi and luminescent polymer in its device active region. Interestingly, a well‐controlled ultrathin ncSi layer on the polymer makes possible to recombine electrons and holes in both layers, respectively. Combining red and blue‐green lights, emitted from the ncSi and the polymer layers, respectively, produces the emission of white electroluminescence. Herein, a hybrid‐WLED with a sufficiently low turn‐on voltage (3.5 V), produced by taking advantages of the large Stokes shift inherent in ncSi, is demonstrated. |
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| Keywords: | white light emitting diodes electroluminescence silicon nanocrystals nanoparticles LED devices hybrid devices photoluminescence |
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