| Cu-In合金硒化法制备CuInSe_2薄膜 |
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| 引用本文： | 欧铜钢,谭艳芳,王建兴,周兆锋,潘勇.Cu-In合金硒化法制备CuInSe_2薄膜[J].材料导报,2009,23(22). |
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| 作者姓名： | 欧铜钢 谭艳芳 王建兴 周兆锋 潘勇 |
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| 作者单位： | 湘潭大学材料与光电物理学院,湘潭,4111051;湘潭大学低维材料及其应用技术教育部重点实验室,湘潭,411105 |
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| 基金项目： | 湖南省科技厅重点项目 |
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| 摘 要： | 采用三电极体系恒电压电沉积法制备了Cu-In薄膜,经硒化退火生成CuInSe_2薄膜.采用循环伏安法研究了电沉积Cu-In的循环伏安特性,确定其最佳沉积电位在-0.75V左右,Cu与In的化学计量比为1.1,达到了理想前驱体的Cu与In的化学计量比.研究了不同沉积电位下材料组成、结构与性能的影响.硒化后,Cu与In的化学计量比为1,1时形成了比较单一的CuInSe_2黄铜矿相结构.
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| 关 键 词： | 电沉积 硒化 |
Preparation of CuInSe_2 Thin Films by Selenization of Cu-In Alloys |
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| OU Tonggang,TAN Yanfang,WANG Jianxing,ZHOU Zhaofeng,PAN Yong.Preparation of CuInSe_2 Thin Films by Selenization of Cu-In Alloys[J].Materials Review,2009,23(22). |
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| Authors: | OU Tonggang TAN Yanfang WANG Jianxing ZHOU Zhaofeng PAN Yong |
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| Abstract: | Thin films of copper indium selenizate (CuInSe_2) are grown on Mo substrates by selenization of CuIn precursors are prepared by electrodeposition. Firstly the electrodeposition and of Cu-In alloy is studied by the methods of cyclic voltammetry. The results show that the optimum potentials for electrodeposition is about-0.75V(vs SCE), it is observed that the Cu/In atomic ratio is 1.1.Cu-In thin films are prepared at different deposition potentials. The influences of composition and ctructure on the propenties are investigated. After selenization, stoichiometric CIS films with a single chalcopyrite phase are synthesized from Cu-In precursors. |
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| Keywords: | Cu-In CuInse_2 electrodposition Cu-Zn CuInSe_2 selenization |
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