| 六棱锥衬底旋转角影响LED效率的模拟探究 |
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| 引用本文： | 何攀贵,王海燕,乔 田,周仕忠,林志霆,李国强.六棱锥衬底旋转角影响LED效率的模拟探究[J].半导体光电,2013,34(3):374-377. |
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| 作者姓名： | 何攀贵 王海燕 乔 田 周仕忠 林志霆 李国强 |
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| 作者单位： | 华南理工大学材料科学与工程学院,发光材料与器件国家重点实验室,广州510640 |
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| 基金项目： | 国家自然科学基金项目（51002052）；广东省重大科技专项项目（2011A080801018）；广东省战略性新兴产业专项资金LED产业项目（2011A081301014，2011A081301012）. |
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| 摘 要： | 以正六棱锥型图形化蓝宝石衬底GaN基LED为研究对象,设计并探讨了正六棱锥图案在排布过程中旋转角的变化对LED出光效率的影响,得出各面光通量随旋转角变化的规律:在0°～30°范围,随着旋转角的增大,总光通量与顶部光通量有下降趋势,底部光通量有增长趋势。当六棱锥旋转角在0°～6°范围内时,LED芯片的总光通量和顶部光通量均有最优值。综合考虑,旋转角为0°～6°的六棱锥型图形衬底对正装LED的出光效率有最佳的优化效果。
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| 关 键 词： | LED 图形化衬底 六棱锥 模拟 旋转角 |
| 收稿时间： | 2012/11/30 0:00:00 |
Simulation of GaN-based LEDs on Hexagonal Pyramid-shaped Patterned Sapphire Substrate with Different Rotation Angles |
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| HE Pangui,WANG Haiyan,QIAO Tian,ZHOU Shizhong,LIN Zhiting,LI Guoqiang.Simulation of GaN-based LEDs on Hexagonal Pyramid-shaped Patterned Sapphire Substrate with Different Rotation Angles[J].Semiconductor Optoelectronics,2013,34(3):374-377. |
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| Authors: | HE Pangui WANG Haiyan QIAO Tian ZHOU Shizhong LIN Zhiting LI Guoqiang |
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| Affiliation: | State Key Lab. of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, CHN;State Key Lab. of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, CHN;State Key Lab. of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, CHN;State Key Lab. of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, CHN;State Key Lab. of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, CHN;State Key Lab. of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, CHN |
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| Abstract: | Simulated is the light extraction efficiency of GaN based LEDs fabricated on hexagonal pyramid shaped patterned sapphire substrate (PSS) with different rotation angles. It is revealed that as the rotation angle of hexagonal pyramids changes, the luminous flux from all six facets of LED chips changes in different trends. When the rotation angle rises from 0° to 30°, the top and total luminous flux decreases, but the bottom luminous flux increases inversely. Further, both the top and total luminous fluxes reach the maximum when the rotation angle is at the range of 0~6°. Combining the optical performance with the processing technique, it is safe to conclude that the hexagonal pyramid shaped PSS LEDs with rotation angle of 0~6° have the highest light extraction efficiency. |
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| Keywords: | LED patterned substrate hexagonal pyramid simulation rotation angle |
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