| 移动通信中的射频集成电路 |
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| 引用本文： | 胡荣中.移动通信中的射频集成电路[J].固体电子学研究与进展,2000,20(4):391-395,432. |
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| 作者姓名： | 胡荣中 |
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| 作者单位： | 南京电子器件研究所,210016 |
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| 摘 要： | 介绍分析了在蜂窝和个人通信业务 (PCS)市场中适用于 RFIC的多种射频晶体管技术。Ga As HBT技术被作为介绍的基线 ,并且与目前已有的技术进行比较 ,得出对于射频应用 ,Ga AsHBT综合了 Si BJT和 Ga As FET两者优点的结论。文中还介绍了近年来国外 Ga As HBT MMIC,PHEMT MMIC和 In P HBT MMIC的研究进展情况。
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| 关 键 词： | 移动通信 半导体 射频集成电路 |
RFIC's for Mobile Communication Systems |
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| Hu Rongzhong.RFIC's for Mobile Communication Systems[J].Research & Progress of Solid State Electronics,2000,20(4):391-395,432. |
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| Authors: | Hu Rongzhong |
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| Abstract: | This review presents many RF transistor technologies for RFIC applications in cellular and personal communications service (PCS) markets.GaAs HBT technologies are mainly introduced and compared with existing technologies.It is concluded that the GaAs HBTs combine the good gualities of both Si BJT and GaAs FET for RF applications.The state of arts of GaAs HBT MMIC,PHEMT MMIC and InP HBT MMIC are alse reviewed. |
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| Keywords: | mobile communication semiconductor RF |
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