Layered growth of Ti2AlC and Ti3AlC2 in combustion synthesis |
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Authors: | Guanghua Liu Heping Zhou Kegang Ren |
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Affiliation: | a Department of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing, 100084, People's Republic of China b Department of Chemistry, Honghe University, Yunnan, 661100, People's Republic of China c Department of Ceramics and Glass Engineering, University of Aveiro, CICECO, 3810-193, Aveiro, Portugal |
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Abstract: | In Ti-Al-C system two ternary carbides of Ti2AlC and Ti3AlC2 were prepared by combustion synthesis. Laminated grain morphology and a terraced structure consisting of several parallel laminated layers were observed. On the basis of SEM and TEM results, a layered growth mechanism was proposed to describe the formation of the terraced structure. In this mechanism, the ternary carbide grains will undergo a preferential growth, i.e. each layer grows fast and expands quickly in the basal plane and all the layers are successively stacked along the normal direction identical to the c-axis in the hexagonal structure. This preferential growth characterized by the terraced structure was widely observed in this study and hence may be a common behavior during the growth of Ti2AlC and Ti3AlC2 crystals in combustion synthesis. |
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Keywords: | Ternary carbides Crystal growth Combustion synthesis |
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