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High-efficiency microwave oscillations from Si avalanche diodes |
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| Authors: | Grace M.I. Gibbons G. |
| Affiliation: | Sperry Rand Research Center, Sudbury, USA; |
| Abstract: | High-efficiency microwave oscillations have been observed in Si p?n and p?n?n+ diodes under pulsed conditions. At about 25 mA reverse-bias current, a sudden decrease in voltage across the diode and an increase in bias current are observed, giving peak output power of 10?20 W and efficiency up to 30% between 1 and 3 GHz. |
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