本征掺杂环栅MOSFET器件连续表面势电压方程及其在从积累到反型区域的解析解

本文提出了本征掺杂的长沟环栅MOSFET器件的连续表面势方程并讨论了其物理解。这个方程适用于器件从积累到强反型的工作区域。原始方程通过简化Poisson方程的精确解得到，然后通过经验修正得到满足连续性条件的表面势电压方程，允许表面电势及其导数由解析式表示，同时在积累到反型、线性到饱和区域精确连续。基于这个结果，我们对表面电势和中心电势对器件尺寸的依赖关系进行了分析，并通过三维的器件模拟进行了验证。

Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution from accumulation to strong inversion region

A continuous surface potential versus voltage equation is proposed and then its solution is further discussed for a long channel intrinsic surrounding-gate (SRG) MOSFET from the accumulation to strong inversion region. The original equation is derived from the exact solution of a simplified Poisson equation and then the empirical correction is performed from the mathematical condition required by the continuity of the solution, which results in a continuous surface potential versus voltage equation, allowing the surface potential and the related derivatives to be described by an analytic solution from the accumulation to strong inversion region and from linear to the saturation region accurately and continuously. From these results, the dependences of surface potential and centric potential characteristics on device geometry are analyzed and the results are also verified with the 3-D numerical simulation from the aspect of accuracy and continuity tests.