GexSi1—x／Si量子阱和超晶格红外光电压谱

采用电容耦合法,在18～300K 温度范围内测量了一系列 Ge_xSi_(1-x)/Si应变层多量子阱和 Ge/Si 超薄超晶格在不同温度下的红外光电压谱。实验结果表明,在长波段有强的光电压信号。文中还对 Ge_xSi_(1-x)/Si 量子阱和超晶格的能带排列和光伏效应作了讨论。

Infrared photovoltage Spectra of Ge_xSi_(1-x)/Si Quantum Wells and Superlattices

The infrared photovoltage spectra of Ge_xSi_(1-x)/Si strained layer multiple quantum wells and Ge/Si ultrathin superlattices at different tempe- ratures ranging from 18K to 300K have been measured by capacitor coupling method.The experimental results show that there exists a strong photovoltage signal at long wavelength bands.The band alignments and the photovoltaic ef- fects of Ge_xSi_(1-x)/Si quantum wells and superlattices are also discussed in the paper.