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单晶硅太阳能电池前表而化学腐蚀研究
引用本文:李愿杰,黄仑,胡蕴成.单晶硅太阳能电池前表而化学腐蚀研究[J].东方电气评论,2011,25(4):68-73.
作者姓名:李愿杰  黄仑  胡蕴成
作者单位:东方电气集团中央研究院,成都,611731
摘    要:制绒工艺是晶硅太阳能电池产业化研究的重要方向之一。本文对德国Rena公司的湿法腐蚀制绒设备进行了工艺流程的简要概括,在产业化环境中对硅片表面的化学处理工艺进行了研究。通过研究分析,自制的GP溶液能有效的降低溶液表面张力并改善单晶硅片表面的浸润效果;湿法腐蚀后,硅片表面绒面结构清晰,金字塔形状均匀,底座大小在2~3μm左右;由腐蚀深度变化曲线分析可知,各腐蚀槽腐蚀深度值92%都集中在7.5~8.5之间,接近最优化腐蚀深度,碎片率低于5‰。

关 键 词:制绒工艺  腐蚀深度  金字塔结构

Study of Surface Chemical Etching of Mono-crystalline Silicon Solar Cells
LI Yuan-jie,HUANG Lun,HU Yun-cheng.Study of Surface Chemical Etching of Mono-crystalline Silicon Solar Cells[J].Dongfang Electric Review,2011,25(4):68-73.
Authors:LI Yuan-jie  HUANG Lun  HU Yun-cheng
Affiliation:(Central Research Academy of Dongfang Electric Corporation,611731,Chengdu,China)
Abstract:The study of texturization process is one of the important directions in silicon solar cell industry.In this paper,the process of Rena’s wet etching system is summarized,and the chemical treatment technology of surface is investigated in the industrial environment.In conclusion,surface tension of solution is decreased and effect of surface invasion is improved because of GP solution.After etching,texturization structure is observed clearly.The size of pyramid structure is about 2~3 μm.According to the analysis of varied curve,the remarkable depth of etching is between 7.5~8.5 mostly,and fragmentation rate is lower than 5‰.
Keywords:texturization process  depth of etching  structure of pyramid
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