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| HgCdTe红外探测器性能分析 | |
| 引用本文： | 曾戈虹. HgCdTe红外探测器性能分析[J]. 红外技术, 2012, 34(1): 1-3 |
| 作者姓名： | 曾戈虹 |
| 作者单位： | 曾戈虹:昆明物理研究所，云南 昆明 650223 |
| 摘 要： | 根据碲镉汞材料的性能、碲镉汞红外探测器物理机理和基本器件模型,对截止波长为3 m、5 m、10.5 m的碲镉汞探测器,在不同工作温度下的探测率性能进行了理论计算。计算结果表明:碲镉汞探测器在短波、中波和长波三个主要红外波段均能满足第三代红外焦平面器件对灵敏度和工作温度的要求。 |
| 关 键 词： | HgCdTe 红外探测器 第三代红外焦平面器件 理论计算 |
| 收稿时间： | 2011-12-27 |
Performance HgCdTe Infrared Detector at Different Temperatures |
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| ZENG Ge-hong. Performance HgCdTe Infrared Detector at Different Temperatures[J]. Infrared Technology, 2012, 34(1): 1-3 | |
| Authors: | ZENG Ge-hong |
| Affiliation: | ZENG Ge-hong(Kunming Institute of Physics,Kunming 650023,China) |
| Abstract: | Based on materials properties and the physics of the HgCdTe detector, the device performance was calculated in terms of detectivity versus background temperatures with cut-off wavelength at 3, 5, and 10.5 μm, respectively.The results show that the performance of HgCdTe detectors can meet the 3rd generation focal plane array requirements for sensitivity and working temperatures. |
| Keywords: | HgCdTe Infrared Detector 3rd generation IRFPAs Theoretical calculation |
| 本文献已被 CNKI 等数据库收录！ | |