Fabrication of low defect density 3C-SiC on SiO2 structures using wafer bonding techniques

This paper reports on a process to fabricate single-crystal 3C-SiC on SiO₂ structures using a wafer bonding technique. The process uses the bonding of two polished polysilicon surfaces as a means to transfer a heteroepitaxial 3C-SiC film grown on a Si wafer to a thermally oxidized Si wafer. Transfer yields of up to 80% for 4 inch diameter 3C-SiC films have been achieved. Homoepitaxial 3C-SiC films grown on the 3C-SiC on SiO₂ structures have a much lower defect density than conventional 3C-SiC on Si films.