430-V 12.4-$hboxmOmegacdot hboxcm^2$Normally off 4H-SiC Lateral JFET

This letter reports the experimental demonstration of the first 4H-SiC normally off high-voltage lateral junction field-effect transistor. The design and fabrication of such a device have been investigated. The fabricated device has a vertical channel length of 1.8$muhboxm$created by tilted aluminum implantation on the sidewalls of deep trenches and a lateral drift-region length of 5$muhboxm$. Normally off operation$(V_ GS=hbox0 V)$with a blocking voltage$V_ br$of 430 V has been achieved with a specific on-resistance$R_ onhbox- sp$of 12.4$hboxmOmega cdot hboxcm^2$, which is the lowest specific on-resistance for 4H-SiC lateral power switches reported to date, resulting in a$V_ br^2/R_ onhbox- sp$value of 15$hboxMW/cm^2$. This is among the best$V_ br^2/R_ onhbox- sp$figure-of-merit reported to date for 4H-SiC lateral high-voltage devices.