| 非晶半导体的研究与应用 |
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| 引用本文： | 清水立生,严辉. 非晶半导体的研究与应用[J]. 功能材料, 2001, 32(4): 348-352 |
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| 作者姓名： | 清水立生 严辉 |
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| 作者单位： | Kanazawa大学工学部电气与计算机工学研究科,;北京工业大学材料科学与工程学院, |
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| 摘 要： | 1968年Ovshinsky在多元硫系薄膜中观察到电的开关与存贮效应以来,特别是1975年氢化非晶Si的p型与n型掺杂控制的实现,非晶半导体作为一个重要的电子材料,在过去的30多年中吸引了大量的基础研究并得到了广泛的应用。本文综述了至今为止非晶半导体重要的研究与应用进展,并探讨非晶半导体今后主要的发展趋势。
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| 关 键 词： | 硫系非晶半导体 氢化非晶硅 电子材料 |
| 文章编号： | 1001-9731(2001)04-0348-05 |
| 修稿时间： | 2000-02-22 |
Research on amorphous semiconductors and its applications |
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| SHIMIZU Tatsuo ,YAN Hui. Research on amorphous semiconductors and its applications[J]. Journal of Functional Materials, 2001, 32(4): 348-352 |
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| Authors: | SHIMIZU Tatsuo YAN Hui |
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| Affiliation: | SHIMIZU Tatsuo 1,YAN Hui 2 |
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| Abstract: | Since the current voltage characteristics of the threshold memory switch in chalcogenides have been observed by Ovshinsky at 1968, especially both n type and p type doping for hydrogenated amorphous silicon have been avaliable, as one kind of important electronic materials amorphous semiconductors in both fundamental research and application were remarkably developed over the past 30 years. Here, we shall present the dominant progress and then introduce the future problems of amorphous semiconductors. |
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| Keywords: | chalcogenide amorphous semiconductors hydrogenated amorphous silicon electronic materials |
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