Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices |
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Authors: | Koren U. Margalit S. Chen T. Yu K. Yariv A. Bar-Chaim N. Lau K. Ury I. |
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Affiliation: | AT&T Bell Labs., Holmdel, NJ, USA; |
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Abstract: | ![]() Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar transistors, and others on a single semiconductor crystal. Here we review some of the integrated circuits that have been realized and discuss the laser structures suited for integration with emphasis on the InGaAsP/InP material system. Some results of high frequency modulation and performance of integrated devices are discussed. |
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