首页 | 本学科首页   官方微博 | 高级检索  
     


Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices
Authors:Koren   U. Margalit   S. Chen   T. Yu   K. Yariv   A. Bar-Chaim   N. Lau   K. Ury   I.
Affiliation:AT&T Bell Labs., Holmdel, NJ, USA;
Abstract:
Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar transistors, and others on a single semiconductor crystal. Here we review some of the integrated circuits that have been realized and discuss the laser structures suited for integration with emphasis on the InGaAsP/InP material system. Some results of high frequency modulation and performance of integrated devices are discussed.
Keywords:
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号