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| 双注入技术进行低剂量监控 | |
| 引用本文： | 彭进 黄冰. 双注入技术进行低剂量监控[J]. 固体电子学研究与进展, 1992, 12(3): 255-260 |
| 作者姓名： | 彭进 黄冰 |
| 作者单位： | 中国华晶电子集团公司中央研究所，中国华晶电子集团公司中央研究所 无锡 214035，无锡 214035 |
| 摘 要： | 研究了影响双注入技术的各种因素及双注入技术的灵敏度,并与C—V技术进行比较。结果表明,双注入技术不仅克服了C-V技术的缺点,而且灵敏度高(可大于1),可靠性好,适用于低剂量(10~(10)～10~(12)cm~(-2))注入监控。 |
| 关 键 词： | 双注入 低剂量 方块电阻 灵敏度 监控技术 |
A Low Dose Monitoring Technique by Double Implantation |
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| Peng Jin,Huang Bing. A Low Dose Monitoring Technique by Double Implantation[J]. Research & Progress of Solid State Electronics, 1992, 12(3): 255-260 | |
| Authors: | Peng Jin Huang Bing |
| Abstract: | The factors affecting the double implant technique and its sensitivity are studied in this paper. The comparision between the double implant and C-V techniques is also, given. The results show that the double implant technique not only avoids the disadvantages of C-V technique, but also has higher sensitivity (may greater than l)and good reliability. It's useful for the low dose (1010- 1012cm-2) monitoring. |
| Keywords: | Double Implantation Low Dose Sheet Resistance Sensitivity Monitoring Technique |
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