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Au与p-CZT晶体的接触特性及其CZT表面处理状态的影响
引用本文:李强,介万奇,傅莉,汪晓芹,查钢强,杨戈.Au与p-CZT晶体的接触特性及其CZT表面处理状态的影响[J].功能材料,2006,37(4):630-631,634.
作者姓名:李强  介万奇  傅莉  汪晓芹  查钢强  杨戈
作者单位:西北工业大学,材料科学与工程学院,陕西,西安,710072
基金项目:国家高技术研究发展计划(863计划)
摘    要:对不同腐蚀、钝化表面处理的CZT晶片与Au接触的I-V特性进行了研究.用XPS分析了钝化前后CZT晶体表面成分,发现钝化后CZT晶片表面形成厚度为3.1nm的TeO2氧化层.用Agilent 4339B高阻仪进行未腐蚀、腐蚀与腐蚀钝化的CZT晶片I-V特性测试,结果表明腐蚀和腐蚀钝化均能不同程度提高Au/p-CZT接触的势垒高度,相应地减小了漏电流.

关 键 词:Schottky接触  钝化  I-V特性
文章编号:1001-9730(2006)04-0630-02
收稿时间:2005-08-09
修稿时间:2005-08-092005-10-17

Properties of the Au/p-CZT contact and effects of the CZT surface treatment states
LI Qiang,JIE Wan-qi,FU Li,WANG Xiao-qin,ZHA Gang-qiang,YANG Ge.Properties of the Au/p-CZT contact and effects of the CZT surface treatment states[J].Journal of Functional Materials,2006,37(4):630-631,634.
Authors:LI Qiang  JIE Wan-qi  FU Li  WANG Xiao-qin  ZHA Gang-qiang  YANG Ge
Abstract:The I-V characteristics of Au/p-CZT contacts for various CZT surface treatment including etching and passivation were investigated in this paper.After the passivation,TeO_2 oxide layer with the thickness of 3.1nm was determined on the surface of CZT wafer through the analysis on the CZT surface elements by XPS.I-V characteristics of Au/p-CZT contacts with different surface treatment CZT wafer's surface were measured by Agilent 4339B high resistance meter.It was shown that etching and passivation could increase the barrier height of the Au/p-CZT and decrease the leakage current.
Keywords:Schottky contacts  passivation  I-V character
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