Structural and electronic properties of CuInSe2 |
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| Authors: | A Vahid Shahidi I Shih T Araki C H Champness |
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| Affiliation: | (1) Department of Electrical Engineering, McGill University, 3480 University Street, H3A 2A7 Montreal, P.Q., Canada;(2) Department of Geological Sciences, McGill University, Canada |
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| Abstract: | Structural investigation on monocrystalline CuInSe2 samples has been made. From the single crystal results, the space group of CuInSe2 was confirmed to be I¯42d and the crystal solidification direction was investigated. Compositional uniformity of the ingots was established by EPMA and it was found that the indium concentration was greater than that for copper. Systematic annealing experiments were carried out in vacuum at different temperatures (as low as 160° C) and for different times. Large variation in resistivity was observed after the annealing treatment. P-type samples were found to convert to n-type after the heat-treatments. |
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| Keywords: | Copper indium diselenide structural and electrical properties annealing effects |
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