| 三维半导体GaAs量子阱微腔中的腔极化激元 |
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| 引用本文： | 刘文楷,林世鸣,安艳伟,张存善. 三维半导体GaAs量子阱微腔中的腔极化激元[J]. 半导体学报, 2004, 25(10): 1319-1323 |
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| 作者姓名： | 刘文楷 林世鸣 安艳伟 张存善 |
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| 作者单位： | 北方工业大学信息工程学院 北京100041(刘文楷，安艳伟)，中国科学院半导体研究所集成光电子国家重点实验室 北京100083(林世鸣)，河北工业大学电气信息学院 天津300130(张存善) |
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| 摘 要： | 半导体微腔中腔模和激子模耦合形成腔极化激元,三维微腔中由于横向限定腔模和激子模形成离散化的本征模式.本文计算了远离截止近似下,三维半导体微腔中空腔腔模的能量与微腔半径的关系;及腔模和激子模耦合后,三维半导体柱型微腔中具有相同角量子数和径向量子数的两个低阶腔模、重空穴激子模、轻空穴激子模耦合形成的腔极化激元能量随微腔半径变化的情况.结果表明随着微腔半径的减小腔模能量蓝移,腔模与相应的重空穴激子模、轻空穴激子模耦合形成的腔极化激元的三支随着微腔半径的减小存在明显的反交叉行为.随着微腔半径的变化,极化激元的三支所体现的模
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| 关 键 词： | 半导体微腔 腔极化激元 激子 |
| 文章编号： | 0253-4177(2004)10-1319-05 |
| 修稿时间： | 2003-10-01 |
Cavity Polaritons of GaAs Quantum in Three-Dimension Semiconductor Microcavity |
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| Liu Wenkai,Lin Shiming,An Yanwei and Zhang Cunshan. Cavity Polaritons of GaAs Quantum in Three-Dimension Semiconductor Microcavity[J]. Chinese Journal of Semiconductors, 2004, 25(10): 1319-1323 |
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| Authors: | Liu Wenkai Lin Shiming An Yanwei Zhang Cunshan |
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| Affiliation: | Liu Wenkai1,Lin Shiming2,An Yanwei1 and Zhang Cunshan3 |
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| Abstract: | In the far from cutoff approximation the energies of empty cavity modes vs radii of three-dimension semiconductor microcavity are evaluated.The energie s of cavity polarit ons coupled by the lower cavity modes,heavy-hole,and light-hole exciton modes, which must have the same azimuthal and radial quantum number,are calculated.It i s indicated that the cavity modes blueshift with decreased radius,and on decr easing radii there is obvious anticross between the three polaritons resulted f rom interaction between cavity modes and its corresponding exciton modes.It is a lso shown that the primary characteristics exhibited by the cavity polaritons a re different from varied radii. |
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| Keywords: | semiconductor microcavity cavity polariton exc iton |
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