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Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface |
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| Authors: | Kovchavtsev A P Aksenov M S Nastov’yak A E Valisheva N A Gorshkov D V Sidorov G Yu Dmitriev D V |
| Affiliation: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia ;2.Novosibirsk State University, 630090, Novosibirsk, Russia ; |
| Abstract: | Technical Physics Letters - The C–V characteristics of Au/Al2O3/In0.52Al0.48As and Au/SiO2/In0.52Al0.48As metal–insulator–semiconductor structures have been studied. It has been... |
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