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AlN钝化层对AlGaN/GaN异质结及其高温特性的影响
引用本文:陈国强,陈敦军,刘斌,谢自力,韩平,张荣,郑有炓. AlN钝化层对AlGaN/GaN异质结及其高温特性的影响[J]. 功能材料与器件学报, 2008, 14(6)
作者姓名:陈国强  陈敦军  刘斌  谢自力  韩平  张荣  郑有炓
作者单位:南京大学物理系,江苏省光电信息功能材料重点实验室,南京,210093;南京工程学院基础部,南京,211167;南京大学物理系,江苏省光电信息功能材料重点实验室,南京,210093
基金项目:国家自然科学基金 , 国家重点基础研究发展计划(973计划) , 新世纪创新人才建设项目 , 江苏省自然科学基金  
摘    要:主要研究了A1N钝化介质层对AlGaN/GaN异质结势垒层应力的修改以及应力的变化对二维电子气高温输运性质的影响.研究结果表明:AlN介质层会对AlGaN势垒层产生附加的平面压应变;AlN和传统的si3N4钝化介质都能减轻AlGaN势垒层在高温下的应变弛豫,但AlN介质层效果更明显.和传统的Si,N4钝化介质相比较,AlN钝化层不仅会显著增加AlGaN/GaN异质结二维电子气密度度,还会明显提高二维电子气迁移率,同时,AlN钝化后二维电子气密度的温度稳定性也更好.因此,对AlGaN/GaN异质结器件来说,AIN是一种有潜力的钝化介质.

关 键 词:AlGaN/GaN异质结  钝化介质  表面态  二维电子气

Influences of AlN passivation dielectric on AlGaN/GaN heterostructure and its high-temperature properties
Chen Guo-qiang,Chen Dun-jun,Liu Bing,Xie Zi-li,Han Ping,Zhang Rong,Zheng You-dou. Influences of AlN passivation dielectric on AlGaN/GaN heterostructure and its high-temperature properties[J]. Journal of Functional Materials and Devices, 2008, 14(6)
Authors:Chen Guo-qiang  Chen Dun-jun  Liu Bing  Xie Zi-li  Han Ping  Zhang Rong  Zheng You-dou
Affiliation:Chen Guo-qiang1,2,Chen Dun-jun1,Liu Bing1,Xie Zi-li1,Han Ping1,Zhang Rong1,Zheng You-dou1(1.Key Laboratory of Advanced Photonic , Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China,2.Department of Basic Courses,Nanjing Institute of Technology,Nanjing211167,china)
Abstract:The influences of AlN passivation dielectric on the strain change of the AlGaN barrier layer and the high-temperature transport properties of AlGaN/GaN heterostructure have been investigated in the present work.The results show that the AlN passivation layer will induce an additional biaxial compressive strain to AlGaN barrier layer.Both the AlN and traditional Si3N4 passivation dielectrics can mitigate temperature-dependent strain relaxation of the AlGaN barrier,and AlN displayed a better effect.Compared t...
Keywords:AlGaN/GaN heterostructure  passivation dielectric  surface state  two dimensional electron gas  
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