Optimizing polysilicon thin-film transistor performance withchemical-mechanical polishing and hydrogenation |
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| Authors: | Chan A.B.Y. Nguyen C.T. Ko P.K. Man Wong Kumar A. Sin J. Wong S.S. |
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| Affiliation: | Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon; |
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| Abstract: | Chemical-mechanical polishing and hydrogen passivation were jointly used to improve the electrical characteristics of polycrystalline-Si thin-film transistors (poly-Si TFT's). It was found that each treatment affects the devices differently; polishing is more effective in smoothing the poly-Si/SiO2 interface while hydrogenation is more effective in passivating the grain boundaries. Their effects are additive. Hence, optimal device performance was achieved by combining both treatments |
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