Formation of three-dimensional ZnSe-based semiconductor nanostructures |
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| Authors: | S. V. Alyshev A. O. Zabezhaylov R. A. Mironov V. I. Kozlovsky E. M. Dianov |
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| Affiliation: | 1. Fiber Optics Research Center, Russian Academy of Sciences, Moscow, 119333, Russia
2. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, 119991, Russia
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| Abstract: | Nanostructures consisting of a 10-nm-thick sacrificial layer of ZnMgSSe and a 20-nm-thick stressed bilayer of ZnSSe/ZnSe were grown by molecular-beam epitaxy on GaAs substrates. Upon removal of the sacrificial layer by selective etching, multiwall ZnSSe/ZnSe microtubes were formed. |
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